MBRD835L价格
参考价格:¥0.8191
型号:MBRD835LG 品牌:ON 备注:这里有MBRD835L多少钱,2026年最近7天走势,今日出价,今日竞价,MBRD835L批发/采购报价,MBRD835L行情走势销售排行榜,MBRD835L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRD835L | SWITCHMODE??Power Rectifirers DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d | MOTOROLA 摩托罗拉 | ||
MBRD835L | 8A LOW VF SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • Plastic Material: UL Flammabilit | DIODES 美台半导体 | ||
MBRD835L | 丝印代码:B835L;SWITCHMODE Power Rectifier This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa | ONSEMI 安森美半导体 | ||
MBRD835L | Switch-mode Power Rectifier DPAK Surface Mount Package This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low | ONSEMI 安森美半导体 | ||
MBRD835L | 肖特基势垒整流器,35 V,8.0 A This Schottky Rectifier with a proprietary barrier metal is designed for output rectifiers, free wheeling, protection and steering diodes, switching power supplies, inverters and other inductive switching circuits. • Low Forward Voltage\n• 125 C Operating Junction Temperature\n• Epoxy Meets UL94, VO at 1/8\"\n• Compact Size\n• Lead Formed for Surface MountMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 0.4 gram (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal Lead; | ONSEMI 安森美半导体 | ||
MBRD835L | 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:DIODE SCHOTTKY 35V 8A DPAK 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
MBRD835L | 100V Current Mode PWM Controller 文件:179.47 Kbytes Page:12 Pages | TI 德州仪器 | ||
MBRD835L | 丝印代码:B835L;SWITCHMODE Power Rectifier 文件:113.63 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | ||
Switch-mode Power Rectifier DPAK Surface Mount Package This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier DPAK Surface Mount Package This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier DPAK Surface Mount Package This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier 文件:113.63 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier 文件:113.63 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier 文件:115.42 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:DIODE SCHOTTKY 35V 8A DPAK 分立半导体产品 二极管 - 整流器 - 单 | DIODES 美台半导体 | |||
SWITCHMODE Power Rectifier 文件:113.63 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier 文件:113.63 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier 文件:115.42 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q | NEC 瑞萨 | |||
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q | NEC 瑞萨 | |||
LMC835 Digital Controlled Graphic Equalizer 文件:474.13 Kbytes Page:18 Pages | NSC 国半 | |||
LMC835 Digital Controlled Graphic Equalizer 文件:474.13 Kbytes Page:18 Pages | NSC 国半 |
MBRD835L产品属性
- 类型
描述
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Configuration:
Single
- VRRM Min (V):
35
- VF Max (V):
0.51
- IRM Max (µA):
1400
- IO(rec) Max (A):
8
- IFSM Max (A):
75
- Package Type:
DPAK-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
11048 |
全新原装正品/价格优惠/质量保障 |
|||
ON/安森美 |
25+ |
TO-252 |
32360 |
ON/安森美全新特价MBRD835LT4即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
20+ |
TO252 |
40000 |
||||
ON/安森美 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
23+ |
TO-252 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
ON/安森美 |
25+ |
TO252 |
33500 |
全新进口原装现货,假一罚十 |
|||
ON |
24+ |
TO-252 |
98000 |
一级代理/全新原装现货/长期供应! |
|||
ON/安森美 |
24+ |
TO-252 |
25000 |
新到现货,只有原装 |
|||
ON(安森美) |
25+ |
TO-252-2(DPAK) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON/安森美 |
22+ |
TO-252-3 |
8000 |
原装正品现货假一罚十 |
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MBRD835L规格书下载地址
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DdatasheetPDF页码索引
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