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MBRD835L价格

参考价格:¥0.8191

型号:MBRD835LG 品牌:ON 备注:这里有MBRD835L多少钱,2026年最近7天走势,今日出价,今日竞价,MBRD835L批发/采购报价,MBRD835L行情走势销售排行榜,MBRD835L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRD835L

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

MOTOROLA

摩托罗拉

MBRD835L

8A LOW VF SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • Plastic Material: UL Flammabilit

DIODES

美台半导体

MBRD835L

丝印代码:B835L;SWITCHMODE Power Rectifier

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa

ONSEMI

安森美半导体

MBRD835L

Switch-mode Power Rectifier DPAK Surface Mount Package

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low

ONSEMI

安森美半导体

MBRD835L

肖特基势垒整流器,35 V,8.0 A

This Schottky Rectifier with a proprietary barrier metal is designed for output rectifiers, free wheeling, protection and steering diodes, switching power supplies, inverters and other inductive switching circuits. • Low Forward Voltage\n• 125 C Operating Junction Temperature\n• Epoxy Meets UL94, VO at 1/8\"\n• Compact Size\n• Lead Formed for Surface MountMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 0.4 gram (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal Lead;

ONSEMI

安森美半导体

MBRD835L

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:DIODE SCHOTTKY 35V 8A DPAK 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

MBRD835L

100V Current Mode PWM Controller

文件:179.47 Kbytes Page:12 Pages

TI

德州仪器

MBRD835L

丝印代码:B835L;SWITCHMODE Power Rectifier

文件:113.63 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier DPAK Surface Mount Package

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low

ONSEMI

安森美半导体

Switch-mode Power Rectifier DPAK Surface Mount Package

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low Forwa

ONSEMI

安森美半导体

Switch-mode Power Rectifier DPAK Surface Mount Package

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:113.63 Kbytes Page:5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:113.63 Kbytes Page:5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:115.42 Kbytes Page:5 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:DIODE SCHOTTKY 35V 8A DPAK 分立半导体产品 二极管 - 整流器 - 单

DIODES

美台半导体

SWITCHMODE Power Rectifier

文件:113.63 Kbytes Page:5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:113.63 Kbytes Page:5 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:115.42 Kbytes Page:5 Pages

ONSEMI

安森美半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

MBRD835L产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Single

  • VRRM Min (V):

    35

  • VF Max (V):

    0.51

  • IRM Max (µA):

    1400

  • IO(rec) Max (A):

    8

  • IFSM Max (A):

    75

  • Package Type:

    DPAK-3

更新时间:2026-5-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
11048
全新原装正品/价格优惠/质量保障
ON/安森美
25+
TO-252
32360
ON/安森美全新特价MBRD835LT4即刻询购立享优惠#长期有货
ON/安森美
20+
TO252
40000
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
ON
23+
TO-252
32078
10年以上分销商,原装进口件,服务型企业
ON/安森美
25+
TO252
33500
全新进口原装现货,假一罚十
ON
24+
TO-252
98000
一级代理/全新原装现货/长期供应!
ON/安森美
24+
TO-252
25000
新到现货,只有原装
ON(安森美)
25+
TO-252-2(DPAK)
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ON/安森美
22+
TO-252-3
8000
原装正品现货假一罚十

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