DESCRIPTION

The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

• Low noise

Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA

Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• High gain

Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA

Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• Flat-lead 6-pin thin-type ultra super minimold package

• Built-in 2 different transistors (2SC5010, 2SC5006)