Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Automotive Dual N-Channel 12 V (D-S) 175 째C MOSFETs

文件：377.36 Kbytes Page：13 Pages

Automotive Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：254.94 Kbytes Page：11 Pages

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

文件：222.37 Kbytes Page：11 Pages

Automotive Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：254.94 Kbytes Page：11 Pages

Automotive Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：254.94 Kbytes Page：11 Pages

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA952 is designed for use in output stages of portable radio and cassette type tape recorder, general purpose applications.

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

SUBMINIATURE POWER RELAY

[AZETTILER] FEATURES • Subminiature size for high density packaging • Coil sensitivity to 116 mW • Extremely low cost • Coils to 24 VDC • Epoxy sealed for automatic wave soldering • 1 Amp, 3 Amp & 5 Amp contacts • Life expectancy to 10 million operations • UL, CUR file E43203

CONN PLUG USB3.0 MICRO USB B SLD

文件：152.96 Kbytes Page：1 Pages

EL Flowing Effect Wire with Inverter - Green 2.0 meter (6.5 ft)

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