Automotive P-Channel 80 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Automotive Dual N-Channel 12 V (D-S) 175 °C MOSFETs

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Automotive P-Channel 80 V (D-S) 175 째C MOSFET

文件：251.44 Kbytes Page：10 Pages

Automotive P-Channel 80 V (D-S) 175 °C MOSFET

Automotive P-Channel 80 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF479 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 50 MHz.

Silicon PIN Diodes

Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Applications • Current controlled HF resistance in adjustable attenuators

Silicon PIN Diodes

Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Applications • Current controlled HF resistance in adjustable attenuators

RF PIN Diodes - Single in DO-35 (DO-204AH)

FEATURES • Wide frequency range 10 MHz to 1 GHz • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Current controlled HF resistance in adjustable attenuators MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathod

RF PIN Diodes - Single in DO-35

文件：104.1 Kbytes Page：4 Pages