位置：首页 > IC中文资料第2179页 > SQD45N05
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS IV POWER FIELD EFFECT TRANSISTORS TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate | Motorola 摩托罗拉 |   | ||
TMOS IV POWER FIELD EFFECT TRANSISTORS TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate | Motorola 摩托罗拉 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bip | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Fast Switching 文件：49.43 Kbytes Page：2 Pages | ISC 无锡固电 | |
SQD45N05产品属性
- 类型
描述
- 型号
SQD45N05
- 功能描述
MOSFET 50V 45A 75W 18mohm @ 10V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYSTEKEC |
24+ |
NA/ |
5723 |
原装现货,当天可交货,原型号开票 |
|||
CYSTEKEC |
19+ |
SOP8 |
1070 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CYS |
20+ |
SOT-223 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
MOT |
TO220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
NEW |
TO-220 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
MOT |
06+ |
TO-220 |
3000 |
原装 |
|||
ON/安森美 |
23+ |
TO-220 |
15500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
1820 |
|||||
CYSTEKEC |
2450+ |
SOP8 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CYSTECH/全宇昕 |
25+ |
SOP8 |
19800 |
一站式BOM配单 |
SQD45N05芯片相关品牌
SQD45N05规格书下载地址
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2020-10-29
DdatasheetPDF页码索引
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