位置：首页 > IC中文资料第1639页 > SQD40N04
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Automotive N-Channel 40 V (D-S) 175 °C MOSFET 文件：156.6 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 |   | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM40N04Z uses advanced trench technology and design to provide excellent RDS(ON) with l | ADV 爱德微 | | ||
40V N-Channel Enhancement Mode MOSFET Features RDS(ON), VGS@10V, ID@20A | PANJIT 強茂 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：1.08667 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.59034 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Superior Avalanche Rugged Technology 文件：876.38 Kbytes Page：8 Pages | SEMIHOW | |
SQD40N04产品属性
- 类型
描述
- 型号
SQD40N04
- 功能描述
MOSFET 40V 40A 71W 10mohm @ 10V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
23+ |
TO-252 |
6500 |
原厂原装正品 |
|||
VISHAY/威世 |
11+ |
TO-252 |
4000 |
||||
VISHAY/威世 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
25+23+ |
TO-252 |
27649 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
25+ |
TO-2632L(D2PAK) |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
VIS |
23+ |
TO-252 |
10000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
22+ |
TO-252 |
20000 |
只做原装 品质保障 |
SQD40N04芯片相关品牌
SQD40N04规格书下载地址
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SQD40N04数据表相关新闻
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2020-10-29
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