丝印代码：M40N04Z；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM40N04Z uses advanced trench technology and design to provide excellent RDS(ON) with l

MOSFET

40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR

DESCRIPTION The UTC UT40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed

丝印代码：HM40N04K；N-Channel Enhancement Mode Power MOSFET

文件：1.08667 Mbytes Page：7 Pages

Superior Avalanche Rugged Technology

文件：876.38 Kbytes Page：8 Pages

丝印代码：YJD40N04A；N-Channel Enhancement Mode Field Effect Transistor

文件：575.17 Kbytes Page：6 Pages