Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

文件：261.23 Kbytes Page：10 Pages

Automotive P-Channel 30 V (D-S) 175 째C MOSFET

文件：206.98 Kbytes Page：10 Pages

Automotive Dual P-Channel 60 V (D-S) 175 째C MOSFET

文件：193.88 Kbytes Page：9 Pages

Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Dual P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -5 A RDS(ON)

Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

文件：261.93 Kbytes Page：11 Pages

Automotive Dual P-Channel 60 V (D-S) 175 째C MOSFET

文件：193.88 Kbytes Page：9 Pages

Dual P-Channel 6 0-V (D-S) MOSFET

文件：1.91276 Mbytes Page：9 Pages

Automotive Dual P-Channel 60 V (D-S) 175 째C MOSFET

文件：193.88 Kbytes Page：9 Pages

Low Distortion, 3.2 GHz, RF DGA

FEATURES High speed −3 dB bandwidth: 3.2 GHz −1 dB bandwidth: 1.8 GHz Slew rate: 12,000 V/μs Digitally adjustable gain Voltage gain: −6 dB to +15 dB Power gain: −3 dB to +18 dB 5-bit parallel or SPI bus gain control with fast attack IMD3/HD3 distortion, maximum gain, 5 V, high performance (HP

Digitally adjustable gain

文件：1.0254 Mbytes Page：25 Pages

Low-Power CODEC with Audio/Voice DSP

文件：198.72 Kbytes Page：4 Pages

Low-Power CODEC with Audio/Voice DSP

文件：311.18 Kbytes Page：4 Pages

Low-Power CODEC with Audio/Voice DSP

文件：198.72 Kbytes Page：4 Pages