Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤220mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS™ Power Transistor

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS Power Transistor

文件：771.02 Kbytes Page：13 Pages

Cool MOS Power Transistor

文件：771.02 Kbytes Page：13 Pages

Cool MOS Power Transistor

文件：2.95619 Mbytes Page：13 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS Power Transistor

文件：2.95619 Mbytes Page：13 Pages

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15549 Mbytes Page：11 Pages

20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages