| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPS5012FT | Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD |   | |
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD Power Inductor | SUPERWORLD | | ||
SMD Power Inductor | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD Power Inductor | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：242.34 Kbytes Page：5 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Low Profile Power Inductors 文件：303.96 Kbytes Page：8 Pages | SUPERWORLD | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Zener Diode, 1/2 Watt 짹5 Tolerance Features: ● Zener Voltage 2.4 to 200V ● DO35 Package | NTE | |
SPS5012FT产品属性
- 类型
描述
- Width (mm)：
5.00
- Height (mm)：
1.20
- Inductance (µH)：
10.0
- DCR (Ω)：
430.00
- Isat (mA)：
1100
- Irms (mA)：
900
- Packing (Reel)：
3000
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Amphenol Aerospace Operations |
25+ |
4 |
原厂现货渠道 |
||||
SUPERWORLD |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
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DdatasheetPDF页码索引
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