CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • CoolMOS CFD designed for • Softswitching PWM Stages • LC

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.185Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications;

CoolMOS Power Transistor

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CoolMOS Power Transistor

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600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

HiPerFAST IGBT

HiPerFAST™ IGBT with Diode Combi Pack Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l M

HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD • High frequency IGBT • High current handling capability • 3rd generation HDMOS™ process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface)

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