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SPP21N50C3价格
参考价格：￥11.1330
型号：SPP21N50C3XKSA1 品牌：Infineon 备注：这里有SPP21N50C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPP21N50C3批发/采购报价，SPP21N50C3行情走势销售排行榜，SPP21N50C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP21N50C3 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 |   | |
SPP21N50C3 | N-Channel MOSFET Transistor • DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤190mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance a | ISC 无锡固电 | | |
SPP21N50C3 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：756.75 Kbytes Page：14 Pages | Infineon 英飞凌 | | |
SPP21N50C3 | New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge 文件：2.05204 Mbytes Page：14 Pages | Infineon 英飞凌 | | |
SPP21N50C3 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge 文件：2.05204 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：756.75 Kbytes Page：14 Pages | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤190mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance a | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：756.75 Kbytes Page：14 Pages | Infineon 英飞凌 | |
SPP21N50C3产品属性
- 类型
描述
- 型号
SPP21N50C3
- 功能描述
MOSFET COOL MOS N-CH 560V 21A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
49 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON/英飞凌 |
25+ |
TO220 |
20300 |
INFINEON/英飞凌原装特价SPP21N50C3即刻询购立享优惠#长期有货 |
|||
INFINEON |
1932+ |
TO-220 |
433 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
2450+ |
TO-220 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
23+ |
TO-220(TO-220-3) |
19850 |
原装正品,假一赔十 |
|||
INFINEON |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
INFINEON |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
2016+ |
TO-220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
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SPP21N50C3规格书下载地址
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