Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：756.75 Kbytes Page：14 Pages

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：2.05204 Mbytes Page：14 Pages

Isc N-Channel MOSFET Transistor

文件：355.64 Kbytes Page：3 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤190mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance a

N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：756.75 Kbytes Page：14 Pages