Isc N-Channel MOSFET Transistor

• FEATURES • Ultra low effective capacitances • Low gate charge • Improved transconductance • Low gate drive power loss • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC CoolMOS CFD designed for: • Softswitching P

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOSTM Power Transistor Features High peak current capability

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS C3 designed for: • Notebook Adapter

500V-900V CoolMOS™ N-Channel Power MOSFET

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：689.7 Kbytes Page：14 Pages

Cool MOS??Power Transistor

文件：689.7 Kbytes Page：14 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：689.7 Kbytes Page：14 Pages

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages

CoolMOSTM Power Transistor