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SPP02N80价格
参考价格：￥3.6601
型号：SPP02N80C3 品牌：Infineon 备注：这里有SPP02N80多少钱，2025年最近7天走势，今日出价，今日竞价，SPP02N80批发/采购报价，SPP02N80行情走势销售排行榜，SPP02N80报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP02N80 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·IndustrialwithhighDCbulkvoltage ·Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
CoolMOSTMPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
CoolMOSTMPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-ChannelPowerMOSFET 文件：422.85 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 |  | | |
N-ChannelPowerMOSFET 文件：1.89969 Mbytes Page：4 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
Plastic-EncapsulateMOSFETS 文件：691.21 Kbytes Page：3 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.50205 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
SPP02N80产品属性
- 类型
描述
- 型号
SPP02N80
- 功能描述
MOSFET COOL MOS N-CH 800V 2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SP |
23+ |
TO263 |
8215 |
原厂原装 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
INFINEON |
22+ |
TO-220 |
36448 |
原装现货库存.价格优势 |
|||
Infineon(英飞凌) |
22+ |
NA |
7000 |
原厂原装现货 |
|||
Infineon(英飞凌) |
/ |
N/A |
12 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
24+ |
TO-220 |
5850 |
全新原装现货 |
|||
INFINEON/英飞凌 |
24+ |
TO220 |
18093 |
原装进口假一罚十 |
|||
INFINEON |
23+ |
T0-220 |
7936 |
||||
Toohong |
21+ |
TO-220 |
8924 |
原装现货假一赔十 |
|||
Infineo |
2020+ |
TO-220 |
70 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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