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SPP02N80价格
参考价格：￥3.6601
型号：SPP02N80C3 品牌：Infineon 备注：这里有SPP02N80多少钱，2025年最近7天走势，今日出价，今日竞价，SPP02N80批发/采购报价，SPP02N80行情走势销售排行榜，SPP02N80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP02N80 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Industrial with high DC bulk voltage ·Switching | ISC 无锡固电 |   | |
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | ||
N -Channe l Power MOSFET 文件：422.85 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-Channel Power MOSFET 文件：1.89969 Mbytes Page：4 Pages | JIANGSU 长电科技 | | ||
Plastic-Encapsulate MOSFETS 文件：691.21 Kbytes Page：3 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.50205 Mbytes Page：5 Pages | DOINGTER 杜因特 | |
SPP02N80产品属性
- 类型
描述
- 型号
SPP02N80
- 功能描述
MOSFET COOL MOS N-CH 800V 2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3270 |
原厂直销,现货供应,账期支持! |
|||
INFINEON |
2016+ |
TO220 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
25+ |
TO220F |
20300 |
INFINEON/英飞凌原装特价SPP02N80C3即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
2450+ |
TO220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
25+ |
TO220 |
2568 |
原装优势!绝对公司现货 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON/英飞凌 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
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