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SPP02N80价格
参考价格：￥3.6601
型号：SPP02N80C3 品牌：Infineon 备注：这里有SPP02N80多少钱，2024年最近7天走势，今日出价，今日竞价，SPP02N80批发/采购报价，SPP02N80行情走势销售排行榜，SPP02N80报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP02N80 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·IndustrialwithhighDCbulkvoltage ·Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
CoolMOSTMPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOSTMPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelPowerMOSFET 文件：422.85 Kbytes Page：2 Pages | ZPSEMI ZP Semiconductor |  | | |
N-ChannelPowerMOSFET 文件：1.89969 Mbytes Page：4 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
Plastic-EncapsulateMOSFETS 文件：691.21 Kbytes Page：3 Pages | ZPSEMI ZP Semiconductor | | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.50205 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
SPP02N80产品属性
- 类型
描述
- 型号
SPP02N80
- 功能描述
MOSFET COOL MOS N-CH 800V 2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO220 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
infineon |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineo |
2020+ |
TO-220 |
70 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SP |
23+ |
TO263 |
39 |
大批量供应优势库存热卖 |
|||
Infineon Technologies |
22+/23+ |
PG-TO220-3 |
7500 |
原装进口公司现货假一赔百 |
|||
INFINEON/英飞凌 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
23+ |
T0-220 |
7936 |
||||
INF |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
infineon |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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