N-Channel Enhancement Mode MOSFET

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N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel Enhancement Mode MOSFET

文件：207.69 Kbytes Page：8 Pages

N-Channel Enhancement Mode MOSFET

文件：207.69 Kbytes Page：8 Pages

N-Channel Enhancement Mode MOSFET

文件：205.81 Kbytes Page：8 Pages

N-Channel Enhancement Mode MOSFET

文件：207.69 Kbytes Page：8 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

General-Purpose Switching Device

Features • ON-resistance RDS(on)1=54mΩ(typ.) • 1.8V drive • Halogen free compliance

N-Channel 30V (D-S) MOSFET

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N-Channel 30V (D-S) MOSFET

文件：211.08 Kbytes Page：3 Pages

30V N-Channel MOSFET

文件：366.55 Kbytes Page：5 Pages