N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

N Channel MOSFET

DUAL TIMING CIRCUIT

Dual Timing Circuit The MC3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the time delay mode of operation, the time is precisely controlled by one

N-Channel PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage

짹15kV ESD-Protected USB Transceivers

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짹15kV ESD-Protected USB Transceivers

文件：366.6 Kbytes Page：19 Pages

Channelized T3 Termination with DS3 Framer, M13 Multiplexer, T1/ E1 Framers and 256 Channel HDLC/PPP controller

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