Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

N-Channel 650 V (D-S) MOSFET

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N-Channel 6 50V (D-S) Power MOSFET

文件：2.12878 Mbytes Page：10 Pages