位置：首页 > IC中文资料第4983页 > SPA04N60C2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPA04N60C2 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances | Infineon 英飞凌 |   | |
SPA04N60C2 | N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | |
SPA04N60C2 | Cool MOS™ Power Transistor | Infineon 英飞凌 | | |
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.94929 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.12878 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
SPA04N60C2产品属性
- 类型
描述
- 型号
SPA04N60C2
- 制造商
INFNON
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INF |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon/英飞凌 |
24+ |
TO-220F(TO-220IS) |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON |
2015+ |
SMD |
19998 |
专业代理原装现货,特价热卖! |
|||
Infineon/英飞凌 |
21+ |
TO-220 |
10000 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
INF进口原 |
17+ |
TO-220F |
6200 |
||||
VBsemi |
25+ |
TO220 |
4292 |
SPA04N60C2规格书下载地址
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特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
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DdatasheetPDF页码索引
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