Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：7.27309 Mbytes Page：9 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：7.27309 Mbytes Page：9 Pages

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications