位置：首页 > IC中文资料第8246页 > SPI5012
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPI5012 | SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD |   | |
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：249.01 Kbytes Page：5 Pages | SUPERWORLD | | ||
SMD POWER INDUCTORS 文件：250.93 Kbytes Page：5 Pages | SUPERWORLD | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Zener Diode, 1/2 Watt 짹5 Tolerance Features: ● Zener Voltage 2.4 to 200V ● DO35 Package | NTE | |
SPI5012产品属性
- 类型
描述
- 型号
SPI5012
- 制造商
SUPERWORLD
- 制造商全称
Superworld Electronics
- 功能描述
SMD POWER INDUCTORS
SPI5012芯片相关品牌
SPI5012规格书下载地址
SPI5012参数引脚图相关
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SPI5012数据表相关新闻
SPI/UART 隔离、ADC/DAC 接口隔离、工业 PLC、电机驱动、电源数字控制、工控板卡信号隔离。
ISO7220MDR 是德州仪器（TI）出品的双通道单向数字隔离器，采用二氧化硅电容隔离架构，用于工业与工控系统的信号电气隔离。
2026-4-16SPH1000J
SPH1000J
2021-10-25SPIRIT1QTR假一罚十
做的是诚信，卖的是良心。
2021-3-4SPIRIT1QTR
Bluetooth 射频收发器 , Zigbee 射频收发器 , SX126x 射频收发器 , - 16 dBm to + 13 dBm ASK, FSK 射频收发器 , 8DPSK, DQPSK, GFSK 射频收发器 , 142 MHz to 1050 MHz 16 dBm 射频收发器
2020-10-9SPI-7210 电机驱动 进口原装 假一罚十
使用 2 相步进电机双极驱动集成电路时，可支持的电机电源电压为 36V(max)/电机电流为 ±1.5A (SPI-7215M)，±1.0A (SPI-7210M)。
2020-6-11SPH252012H4R7MTSPH2520系列绕线贴片功18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 Shenzhen Guanghua Micro Technology Co.， Ltd 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-10-14
DdatasheetPDF页码索引
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