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SPD06N60C3价格
参考价格：￥5.7903
型号：SPD06N60C3 品牌：Infineon 备注：这里有SPD06N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPD06N60C3批发/采购报价，SPD06N60C3行情走势销售排行榜，SPD06N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD06N60C3 | CoolMOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dt rated • Improved transconductance • Pb-free lead plating; RoHS compliant available in Halogen free m | Infineon 英飞凌 |   | |
SPD06N60C3 | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.75Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPD06N60C3 | CoolMOSTM Power Transistor 文件：642.41 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
SPD06N60C3 | Ultra low gate charge 文件：401.49 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
SPD06N60C3 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
CoolMOSTM Power Transistor 文件：642.41 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
Ultra low gate charge 文件：401.49 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.75Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.75Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
CoolMOS Power Transistor CoolMOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dtrated • Improved transconductance • Fully isolated packag | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica | ISC 无锡固电 | | ||
CoolMOSTM Power Transistor 文件：227.83 Kbytes Page：11 Pages | Infineon 英飞凌 | |
SPD06N60C3产品属性
- 类型
描述
- 型号
SPD06N60C3
- 功能描述
MOSFET COOL MOS N-CH 650V 6.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
TO-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
2025+ |
TO-252 |
4000 |
原装进口价格优 请找坤融电子! |
|||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
22+ |
P-TO252-3-1 |
17878 |
原装现货库存.价格优势 |
|||
INFINEON |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
INFINEON |
24+ |
P-TO252-3-1 |
8866 |
||||
INFINEO |
17+ |
TO-252 |
60000 |
保证进口原装可开17%增值税发票 |
|||
Infineon(英飞凌) |
25+ |
TO-252-3 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
SPD06N60C3规格书下载地址
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