平面型VDMOS T2FET系列

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

650V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 15 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V ❐

N-channel MOSFET (TO-251 , TO-252)

文件：753.03 Kbytes Page：7 Pages

N-channel MOSFET (TO-220F , TO-220)

文件：775.92 Kbytes Page：7 Pages

N-Channel Power MOSFET 3.9A, 650V, 3.0廓

文件：325 Kbytes Page：8 Pages