平面型VDMOS T2FET系列

800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

10A, 800V N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

文件：352.08 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：296.15 Kbytes Page：2 Pages