位置：首页 > IC中文资料第2447页 > SPB80P06PGXT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIPMOS Power-Transistor 文件：96.2 Kbytes Page：9 Pages | INFINEON 英飞凌 |   | ||
SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated 文件：525.21 Kbytes Page：11 Pages | INFINEON 英飞凌 | | ||
SIPMOS횘 Power-Transistor 文件：613.52 Kbytes Page：11 Pages | INFINEON 英飞凌 | | ||
SIPMOS Power-Transistor 文件：96.2 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated 文件：525.21 Kbytes Page：11 Pages | INFINEON 英飞凌 | |
SPB80P06PGXT产品属性
- 类型
描述
- 型号
SPB80P06PGXT
- 制造商
Infineon Technologies AG
- 功能描述
TRANS MOSFET P-CH 60V 80A 3PIN TO-263 - Cut TR(SOS)
- 制造商
Infineon Technologies
- 功能描述
Infineon Technologies SPB80P06PGXT MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
8357 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
26+ |
TO-263 |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON |
1044+ |
TO263 |
3940 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
原装 |
25+ |
标准 |
37323 |
热卖原装进口 |
|||
INFINEON/英飞凌 |
10+ |
TO-263 |
2692 |
||||
INFINEON |
25+23+ |
TO-263 |
15381 |
绝对原装正品全新进口深圳现货 |
|||
Infineon(英飞凌) |
25+ |
TO-263 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
infineon |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
INFINEON/英飞凌 |
2025+ |
TO263 |
221 |
原装进口价格优 请找坤融电子! |
|||
INFINEON |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
SPB80P06PGXT芯片相关品牌
SPB80P06PGXT规格书下载地址
SPB80P06PGXT参数引脚图相关
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SPB80P06PGXT数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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