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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP80P06PG | SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated 文件：525.21 Kbytes Page：11 Pages | Infineon 英飞凌 |   | |
SPP80P06PG | P-Channel 60-V (D-S) MOSFET 文件：967.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
P-Channel MOSFET Transistor 文件：334.1 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc P-Channel MOSFET Transistor 文件：297.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SIPMOS Power-Transistor 文件：96.2 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated 文件：525.21 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
SIPMOS횘 Power-Transistor 文件：613.52 Kbytes Page：11 Pages | Infineon 英飞凌 | |
SPP80P06PG产品属性
- 类型
描述
- 型号
SPP80P06PG
- 功能描述
MOSFET P-KANAL
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
13315 |
原厂直销,现货供应,账期支持! |
|||
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INF |
23+ |
TO-220AB |
5000 |
原装正品,假一罚十 |
|||
Infineon |
1645+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
VBsemi(台湾微碧) |
2447 |
TO-220AB |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
INFINEON |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
Infineontechnologies |
24+ |
原装正品 |
5850 |
原装现货 假一赔百 |
SPP80P06PG规格书下载地址
SPP80P06PG参数引脚图相关
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DdatasheetPDF页码索引
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