位置：首页 > IC中文资料第2449页 > SPB80N03S2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | Infineon 英飞凌 |   | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 80A D2PAK | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor | Infineon 英飞凌 | |
SPB80N03S2产品属性
- 类型
描述
- 型号
SPB80N03S2
- 功能描述
MOSFET N-CH 30V 80A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
OptiMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
INFINEON/英飞凌 |
22+ |
TO-263 |
18500 |
原装正品支持实单 |
|||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON/英飞凌 |
24+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INF |
25+23+ |
TO-263 |
28653 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
20+ |
P-TO263-3-2 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
250 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
24+ |
TO-263 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
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SPB80N03S2规格书下载地址
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SPB80N03S2数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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