| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：G65P06；P-Channel Enhancement Mode Power MOSFET Description The G65P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | ||
丝印代码：G65P06；P-Channel Enhancement Mode Power MOSFET Description The G65P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement-Mode Transistors
| TEMIC | | ||
P-Channel Enhancement-Mode Transistors
| TEMIC | | ||
丝印代码：NCE60P65K；P-Channel Enhancement Mode Power MOSFET 文件：1.31416 Mbytes Page：6 Pages | LEIDITECH 雷卯电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO-263 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY |
2016+ |
SOT263 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY |
2430+ |
TO263 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
24+ |
N/A |
2000 |
|||||
VISHAY |
26+ |
T0-263 |
86910 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
SILICONIX |
22+ |
SOT263 |
20000 |
只做原装 品质保障 |
|||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
0804+ |
TO-263 |
446 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
SPB65P06芯片相关品牌
SPB65P06规格书下载地址
SPB65P06参数引脚图相关
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SPB65P06数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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