CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220FPackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

文件：2.01852 Mbytes Page：14 Pages

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件：644.87 Kbytes Page：14 Pages

FastSwitching

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

12Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC12N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch

PowerMOSFETs

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

12A,500VN-CHANNELPOWERMOSFET

文件：167.59 Kbytes Page：6 Pages

N-Channel650V(D-S)MOSFET

文件：1.039369 Mbytes Page：8 Pages