Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS compliant • Quali

isc N-Channel MOSFET Transistor

• FEATURES • New revolutionary high voltage technology • Ultra low gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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500V-900V CoolMOS™ N-Channel Power MOSFET

MOSFET 650V, 7A N-CHANNEL

FEATURE • RoHS Compliant • RDS(ON),typ.=1.2 Ω@VGS=10V • Low Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM07N65 is available in TO220F Package. APPLICATION • Adaptor • Charger • SMPS Standby Power

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel 6 50V (D-S) Power MOSFET

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