SPA07N65价格

参考价格:¥6.9636

型号:SPA07N65C3 品牌:Infineon 备注:这里有SPA07N65多少钱,2024年最近7天走势,今日出价,今日竞价,SPA07N65批发/采购报价,SPA07N65行情走势销售排行榜,SPA07N65报价。
型号 功能描述 生产厂家&企业 LOGO 操作

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScompliant •Quali

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

iscN-ChannelMOSFETTransistor

•FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

文件:3.03035 Mbytes Page:15 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

MOSFET650V,7AN-CHANNEL

FEATURE •RoHSCompliant •RDS(ON),typ.=1.2Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

N-Channel650V(D-S)PowerMOSFET

文件:2.17868 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPA07N65产品属性

  • 类型

    描述

  • 型号

    SPA07N65

  • 功能描述

    MOSFET COOL MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-24 11:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
NA/
4000
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
2022+
TO-220F
57550
VB
2019
TO-220FP
55000
绝对原装正品假一罚十!
INFINEON/英飞凌
12+
TO-220F
20
全新原装正品现货
INFINEON
2020+
TO-220F
46700
公司代理品牌,原装现货超低价清仓!
INFINEON
23+
TO-220F
7936
INFINEON
23+
TO-220F
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON/英飞凌
22+
TO-220F
9600
原装现货,优势供应,支持实单!
Infineon
21+
TO220
1568
10年芯程,只做原装正品现货,欢迎加微信垂询!
INFINEON/英飞凌
TO-220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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