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SPA06N80C3价格
参考价格：￥7.2765
型号：SPA06N80C3 品牌：Infineon 备注：这里有SPA06N80C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPA06N80C3批发/采购报价，SPA06N80C3行情走势销售排行榜，SPA06N80C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPA06N80C3 | Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 |   | |
SPA06N80C3 | CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (250 | Infineon 英飞凌 | | |
SPA06N80C3 | CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (250 | Infineon 英飞凌 | | |
SPA06N80C3 | Cool MOS??Power Transistor 文件：681.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
SPA06N80C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (250 | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (250 | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.9Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.9Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performa | ISC 无锡固电 | | ||
Cool MOS??Power Transistor 文件：681.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor 文件：555.07 Kbytes Page：11 Pages | Infineon 英飞凌 | |
SPA06N80C3产品属性
- 类型
描述
- 型号
SPA06N80C3
- 功能描述
MOSFET MOSFET N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
25+ |
TO220F |
32360 |
INFINEON/英飞凌全新特价SPA06N80C3即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
24+ |
TO-220F |
4400 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
2021+ |
TO-220F |
12000 |
勤思达 只做原装 现货库存 |
|||
Infineon(英飞凌) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
INFINEON |
23+ |
TO-220F |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
Infineon |
23+ |
PG-TO220-3 |
15500 |
英飞凌优势渠道全系列在售 |
SPA06N80C3规格书下载地址
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DdatasheetPDF页码索引
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