Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ● 30V ,7A , RDS(ON)=30mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 20 Volts CURRENT 4.3 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

OSCILLATOR

OSCILLATOR

PHOTO SCR OPTOCOUPLERS

DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package FEATURES • High efficiency, low degradation, liquid epitaxial LED • Underwriters Laboratory (UL) recogniz

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability