Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件：4.91849 Mbytes Page：55 Pages

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Worldwide best Rds,on in TO252 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; available in Halogen free mold co

Receiver with Digital Output Stage for Polymer Optical Fiber Applications

Description The SFH551/1-1 receiver is a transimpedance amplifer with an integrated photodiode and TTL open-collector output stage. The active area of this detector combined with the molded microlens gives an efcient coupling from the end of the polymer optical fber. This receiver enables data ra

Transmitter for Polymer Optical Fiber Applications

Description The SFH757 is a low-cost transmitter diode for optical data transmission with polymer optical fiber. Its In GaAlP LED chip provides enhanced resistance to humidity and is designed to emit light at 650 nm. The robust SFH757 can be used for speeds up to 100 MBd and complements the Ava

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

Smart High-Side Power Switch PROFET One Channel, 12 m?

The BTS 6142D is a one channel high-side power switch in P-TO-252-5-1 package providing embedded protective functions including ReverSave. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology.

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies for Server

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard swi

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server

Lichtwellenleiter LTT 150mm,172mm Fiber-optic cables LTT 150mm,172mm

Key Parameters Length 3000mm Mono glass fiber 200μm Pre tested with pull force of 350N/mm2 Compatible with Laser diode SPL PL90

Lichtwellenleiter LTT 76mm Fiber-optic cables LTT 76mm

Key Parameters Mono glass fiber 200μm Pre tested with pull force of 350N/mm2 Compatible with Laser diode SPL PL90

Lichtwellenleiter LTT 76mm Fiber-optic cables LTT 76mm

Key Parameters Mono glass fiber 200μm Pre tested with pull force of 350N/mm2 Compatible with Laser diode SPL PL90

Lichtwellenleiter LTT 76mm Fiber-optic cables LTT 76mm

Key Parameters Mono glass fiber 200μm Pre tested with pull force of 350N/mm2 Compatible with Laser diode SPL PL90

Smart High-Side Power Switch PROFET One Channel, 10 m?

Product Summary The BTS 6123B is a one channel high-side power switch in P-TO-220-7-180 package providing embedded protective functions including ReverSave™. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip tech

Smart High-Side Power Switch PROFET One Channel, 10 m?

Product Summary The BTS 6123P is a one channel high-side power switch in P-TO-220-7-230 package providing embedded protective functions including ReverSave™. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip tech

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

CoolMOS Power Transistor

Features • Worldwide best RDS,on in TO220 Fullpak • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topolog

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard swit

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is specially designed for:

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies for Server

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard switching SMPS topologies

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: Hard switching SMPS topologies

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target application

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade applications according

Smart Four Channel Highside Power Switch for Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Providing embedded protective functions. Features •Overload protection •Current limitation •

Smart Two Channel Highside Power Switch for Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 140m?

Smart High-Side Power Switch for Industrial Applications

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions Applications • µC compatible high-side power swi

Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 90m?

For Industrial Applications Four Channels: 4 x 90mΩ Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS®technology. • Providing embedded p

Smart Sense High-Side Power Switch For Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit protec

Smart High-Side Power Switch for Industrial Applications

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with dia

Smart Two Channel Highside Power Switch for Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

Smart Sense High-Side Power Switch For Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit protec

Smart Two Channel Highside Power Switch For Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

Smart Two Channel Highside Power Switch For Industrial Applications

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

Programmable Linear Hall Sensor for Industrial Use

1.1 Features • High linear and ratiometric push-pull rail-to-rail output signal • 20-bit Digital Signal Processing • Digital temperature compensation • 12-bit overall resolution • Operates from -40°C up to 120°C • Low drift of output signal over temperature and lifetime • Programmable para

Differential Hall Effect Transmission Speed Sensors

1.1 Target Application The differential Hall Effect sensor TLE4953 is designed to provide information about rotational speed and direction of rotation to modern transmission and ABS systems. The output has been designed as a two wire current interface based on a Pulse Width Modulation principle

868 MHz ASK/FSK Transmitter in 10-pin Package

1.2 Features • fully integrated frequency synthesizer • VCO without external components • ASK and FSK modulation • frequency range 866 ... 870 MHz • high efficiency power amplifier (typically 10 dBm) • low supply current • voltage supply range 2.1 ... 4 V • temperature range −40 ... +85°C

XENSIV™ magnetic position sensors – world’s first fully ISO 26262 compliant linear Hall sensor for high precision applications

Key features ››Fully ISO 26262 compliant, supports ASIL-D systems ››

XENSIV™ magnetic position sensors – world’s first fully ISO 26262 compliant linear Hall sensor for high precision applications

Key features ››Fully ISO 26262 compliant, supports ASIL-D systems ››

XENSIV™ magnetic position sensors – world’s first fully ISO 26262 compliant linear Hall sensor for high precision applications

Key features ››Fully ISO 26262 compliant, supports ASIL-D systems ››

XENSIV™ magnetic position sensors – world’s first fully ISO 26262 compliant linear Hall sensor for high precision applications

Key features ››Fully ISO 26262 compliant, supports ASIL-D systems ››

High Precision Consumer Hall Effect Latch

Features • 3.0 V to 32 V operating supply voltage • Operation from unregulated power supply • Reverse polarity protection (-18 V) • Overvoltage capability up to 42 V without external resistor • Output overcurrent & overtemperature protection • Active error compensation • High stability of m

System-Supply for Safety-Relevant Applications

„ Pre-/post-regulator concept: boost & buck / LDOs & trackers for – μC (main, ADC/reference, StBy) – Transceivers – Sensors „ Integration of functional safety (features supporting ASIL-D) – UV/OV-monitoring – Flexible watchdogs – Error-monitoring – Safe state controller with 2 outputs

System-Supply for Safety-Relevant Applications

„ Pre-/post-regulator concept: boost & buck / LDOs & trackers for – μC (main, ADC/reference, StBy) – Transceivers – Sensors „ Integration of functional safety (features supporting ASIL-D) – UV/OV-monitoring – Flexible watchdogs – Error-monitoring – Safe state controller with 2 outputs

HybridPACKª Light Module

Electrical Features • Increased blocking voltage capability to 705V • Low Switching Losses • Tvj op = 150°C • Trench IGBT 3 • VCEsat with positive Temperature Coefficient Mechanical Features • 2.5 kV AC 1min Insulation • Al2O3 Substrate with Low Thermal Resistance • High mechanical robu

TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers