PACKAGE OUTLINE DIMENSIONS

FEATURES Excellent hFElinearity. High voltage and current. Complementary to 2SA1611. Small package. APPLICATIONS Audio frequency general purpose amplifier.

Schottky Barrier Diodes

Features ◇ Extra small power mold type. ◇ Low VF. ◇ High reliability. Applications ◇ General purpose application.

Surface Mount Switching Diodes

Features ◇ For types of packaging are available. ◇ High speed. ◇ Suitable for high packing density layout. ◇ High reliability. Applications ◇ High speed switching application.

Surface Mount Switching Diode

Features ◇ Small surface mounting type. ◇ High speed. ◇ High reliability with high surge current handing capability Applications ◇ For general purpose switching applications.

Dual Series Switching Diode

Features ◇ Fast switching speed. ◇ High conductance. ◇ Connected in series. ◇ Surface mount package ideally suited for automatic insertion. ESD protection, polarity reversal protection, ◇ Data line protection, Inductive load protection. Applications

Switching Diode

Features • Fast Switching Speed • Surface Mount Package Ideally Suited for Automatic Insertion • For General Purpose Switching Applications • High Conductance

Schottky Barrier Diodes

Features ◇ Small surface mounting type. ◇ Low VF and low IR. ◇ High reliability. Applications ◇ For general purpose applications.

Surface Mount Switching Diodes

Features ◇ Fast trr

Dual Series Switching Diodes

Features ◇ Fast switching speed. ◇ Small surface mounting type. ◇ Two diode elements are connected in series. ◇ Surface mount package ideally suited for automatic insertion Applications ◇ For general purpose switching appilication.

Surface Mount Switching Diodes

Features ◇ Fast switching speed. ◇ High conductance. ◇ For general purpose switching applications. ◇ Surface mount package ideally suited for automatic insertion.

Surface Mount Switching Diodes

Features ◇ Fast Switching Speed ◇ For General Purpose Switching Applications ◇ High Conductance

Surface Mount Switching Diodes

Features ◇ Fast trr

Switching Diode

Features ◇ Fast Switching Speed ◇ For General Purpose Switching Applications ◇ High Conductance

Surface Mount Fast Switching Diodes

Features ◇ High switching speed. ◇ For general purpose switching application. ◇ Small plastic SMD speed. ◇ Low capacitance. ◇ Two electrically isolated series configuration arrays. Applications ◇ For general purpose switching application.

Schottky Diode

Features ◇ Low Turn-on voltage ◇ Fast switching ◇ Also available in lead free version

Switching Diode

Features ◇ Extremely fast switching speed ◇ Low forward voltage:0.4(max)@IF=10mA

Schottky Barrier Diode

Features ◇ High reliability type. ◇ Low VF. ◇ High reliability. Applications ◇ Low current rectification.

Switching Diodes

Features ◇ Power dissipation PD=200Mw. ◇ Two diode elements are connected in series. Applications ◇ High speed switching application.

Schottky Barrier Diodes

Features ◇ Small total capacitance. ◇ Power dissipation.(PD=150mW) Applications ◇ For general purpose applications.

Schottky Barrier Diodes

Features Extremely low minority carrier lifetime. Very low capacitance. Low reverse leakage. Applications For high-efficiency UHF and VHF detector application.

Schottky Diode

Features ◇ Low Forward Voltage ◇ Fast Switching

Surface Mount Switching Diodes

Features ◇ Fast trr

Schottoky Diode

Features ◇ Low forward voltage : VF=0.38V(typ.) ◇ Low reverse current : IR=50uA(max) ◇ Small total capacitance : CT =46pF(typ.)

Switching Diode

Features ◇ For high-speed switching applications ◇ Connected in series

Dual Surface Mount Switching Diodes

Features ◇ For types of packaging are available. ◇ High speed switching. ◇ Suitable for high packing density layout. ◇ High reliability. Applications ◇ For general purpose switching applications.

Surface Mount Switching Diodes

Features ◇ Fast trr

Schottky Barrier Diodes

Features Very low capacitance-less than 1.0Pf @zero volts. Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. Applications —For UHF mixer applications. — —

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SWITCHING DIODE

FEATURES Power dissipation PD : 200 mW（ Tamb=25℃） Collector current IO : 150 mA Collector-base voltage VR : 75 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

SWITCHING DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 250 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR(NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: -100 mA Collector-base voltage V(BR)CBO: -45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

Features Power dissipation PCM : 0.2W (TA=25°C) Collector current ICM : 0.6A Collector-base voltage V(BR)CBO : 75V Operating and storage junction temperature range Tj, Tstg : -55°C to +150°C

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR) CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM : -150 mA Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES * Power dissipation PCM: 0.2 W (Tamb=25℃) * Collector current ICM: -0.2 A * Collector-base voltage V(BR) CBO: -40 V * Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current BASE ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Schottky Barrier Diodes

Features ◇ Small surface mounting type. ◇ Small package. ◇ Low forward voltage:VF=0.23V(typ). Applications ◇ For general purpose applications.

Zener Diode

Features ◇ Planar Die Construction ◇ 200mW Power Dissipation ◇ Zener Voltages from 2.4V - 39V ◇ Ultra-Small Surface Mount Package Power dissipation

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.3 A Collector-base voltage V(BR)CBO: -310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SWITCHING DIODE

FEATURES Power dissipation PD : 200 mW（ Tamb=25℃） Collector current IF : 150 mA Collector-base voltage VR : 75 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

SWITCHING DIODE

FEATURES Power dissipation PD : 200 mW（ Tamb=25℃） Collector current IO : 150 mA Collector-base voltage VR : 75 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 100 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

200mW DAP202U SWITCHING DIODE

FEATURES: Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

SWITCHING DIODE

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Packaging Information

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SMD Type

SOT-323 Plastic-Encapsulate DIODE

文件：119.58 Kbytes Page：1 Pages

TRANSISTOR (NPN)

文件：130.84 Kbytes Page：1 Pages

SOT-323 BIPOLAR TRANSISTORS

文件：49.19 Kbytes Page：1 Pages

Schottky Barrier Diodes

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SMD Type

Socket terminal strip Screw connection

The socket terminal strip 323 is available in 10 mm pitch with 1- to 12-pole design and can be easily stripped to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-version reliably prevents damage to multi-wire

TREK 323

PRODUCT HIGHLIGHTS  Response speed control adjusts the speed/noise trade-off of the AC response  Drift/spacing null adjustment minimizes the variation in zero offset voltage as the probe-to-test surface spacing changes  Easy-to-read front panel 3.5 digit LED display  Monitor the detected