DC-10 GHZ CASCADABLE GAAS MMIC AMPLIFIER

[SIRENZA] Product Description Stanford Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. At 1950 MHz, this amplifier provides 12dB of gain when biased at 50mA. Product Features • Cascadable 50 Ohm Gain Block • 12dB

DC-10 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block.

DC-10 GHZ CASCADABLE GAAS MMIC AMPLIFIER

[SIRENZA] Product Description Stanford Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. At 1950 MHz, this amplifier provides 12dB of gain when biased at 50mA. Product Features • Cascadable 50 Ohm Gain Block • 12dB

DC-10 GHZ CASCADABLE GAAS MMIC AMPLIFIER

[SIRENZA] Product Description Stanford Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. At 1950 MHz, this amplifier provides 12dB of gain when biased at 50mA. Product Features • Cascadable 50 Ohm Gain Block • 12dB

DC-10 GHZ CASCADABLE GAAS MMIC AMPLIFIER

[SIRENZA] Product Description Stanford Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. At 1950 MHz, this amplifier provides 12dB of gain when biased at 50mA. Product Features • Cascadable 50 Ohm Gain Block • 12dB

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.