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SN74ALVC125价格
参考价格：￥1.1882
型号：SN74ALVC125D 品牌：TI 备注：这里有SN74ALVC125多少钱，2026年最近7天走势，今日出价，今日竞价，SN74ALVC125批发/采购报价，SN74ALVC125行情走势销售排行榜，SN74ALVC125报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SN74ALVC125 | QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 |   | |
SN74ALVC125 | QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | |
SN74ALVC125 | 具有三态输出的 4 通道、1.65V 至 3.6V 缓冲器 | TI 德州仪器 | | |
SN74ALVC125 | QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | |
SN74ALVC125 | QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | |
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
封装/外壳：14-TFSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUF NON-INVERT 3.6V 14TVSOP 集成电路（IC） 缓冲器，驱动器，接收器，收发器 | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC BUF NON-INVERT 3.6V 14SOIC 集成电路（IC） 缓冲器，驱动器，接收器，收发器 | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：254 Kbytes Page：11 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：659.64 Kbytes Page：15 Pages | TI 德州仪器 | |
SN74ALVC125产品属性
- 类型
描述
- 型号
SN74ALVC125
- 功能描述
缓冲器和线路驱动器 Tri-State Quad Bus
- RoHS
否
- 制造商
Micrel
- 输入线路数量
1
- 输出线路数量
2
- 极性
Non-Inverting
- 电源电压-最大
+/- 5.5 V
- 电源电压-最小
+/- 2.37 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
MSOP-8
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TI/德州仪器 |
21+ |
TSSOP14 |
1709 |
||||
TI |
19+ |
TSSOP-14 |
8320 |
全新原装公司现货
|
|||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI |
25+ |
1725 |
公司优势库存 热卖中!! |
||||
TI |
05+ |
SOP14 |
1600 |
全新原装绝对自己公司现货 |
|||
TI |
2023+ |
SMD |
10000 |
安罗世纪电子只做原装正品货 |
|||
TI |
25+23+ |
TSSOP-14 |
43817 |
绝对原装正品全新进口深圳现货 |
|||
TI |
23+ |
N/A |
5000 |
全新原装,支持实单,非诚勿扰 |
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- SN74ALVC08PWRE4
- SN74ALVC08PWR
- SN74ALVC08NSR
- SN74ALVC08IPWRQ1
- SN74ALVC08IDREP
- SN74ALVC08DRE4
- SN74ALVC08DR
- SN74ALVC08DGVR
- SN74ALVC08D
- SN74ALVC04RGYR
- SN74ALVC04PWR
- SN74ALVC04PW
- SN74ALVC04DR
- SN74ALS
- SN74AHC
- SN74AC
- SN74ABT
- SN7497N
- SN7497
- SN7496N
- SN7496
- SN7495A
- SN7494N
- SN7494
- SN7493A
- SN7492A
- SN7491A
- SN7490A
- SN7489N
- SN7489J
- SN7489
- SN7488A
- SN7486N
SN74ALVC125数据表相关新闻
SN74ALVC164245DGGR
进口代理
2022-8-23SN74ALS1639J4
SN74ALS1639J4
2022-6-17SN74ALVC162334DLR
品 牌： TI(德州仪器) 厂家型号： SN74ALVC162334DLR 商品编号： C2653042 封装： SSOP-48 数据手册： 下载文件 商品毛重： 0.001克(g) 包装方式： 编带
2021-8-3SN74ALVCH16270DL
安装类型 表面贴装型 封装/外壳 56-BSSOP（0.295，7.50mm 宽） 工作温度 -40°C ~ 85°C 供应商器件封装 56-SSOP 逻辑类型 寄存总线交换器 电流-输出高、低 24mA，24mA 电压-供电 1.65V ~ 3.6V 电路数 12 至 24 位
2021-7-13SN74ALS273NSR
SN74ALS273NSR,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-18SN74ALS996NT，集成电路（IC）逻辑-锁销，现货销售
全新原装，公司现货销售
2019-8-20
DdatasheetPDF页码索引
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