您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第1546页 > SN74ALVC

SN74ALVC价格

参考价格：￥0.8049

型号：SN74ALVC00D 品牌：TI 备注：这里有SN74ALVC多少钱，2025年最近7天走势，今日出价，今日竞价，SN74ALVC批发/采购报价，SN74ALVC行情走势销售排行榜，SN74ALVC报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SN74ALVC

Pocket Data Book

文件：6.00663 Mbytes Page：794 Pages

TI

德州仪器

SN74ALVC00

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00D

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00D.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00DGVR

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00DGVR.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00DR

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00DR.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00DRG4.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00-EP

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00-EP

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00IDRQ1

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00IPWRG4Q1

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00IPWRG4Q1.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00IPWRQ1

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00NSR

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00NSR.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00PWR

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00PWR.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00PWRG4.B

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00-Q1

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

TI2

德州仪器

SN74ALVC00-Q1

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC00RGYR

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC08-EP

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC08IDRQ1

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC08IPWRG4Q1

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC08IPWRG4Q1.B

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC08IPWRQ1

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC08IPWRQ1.B

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC08-Q1

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 2.9 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 d

TI2

德州仪器

SN74ALVC10D

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10D.B

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10DGVR

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10DGVR.B

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10DR

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10DR.B

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10NSR

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10NSR.B

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10PWR

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC10PWR.B

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

TI2

德州仪器

SN74ALVC125D

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125D.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125DGVR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125DGVR.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125DGVRG4.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125DR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125DR.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125DR1G4.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125NSR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125NSR.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PW

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PW.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PWE4

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PWR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PWR.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PWRE4

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC125PWRG4

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

TI2

德州仪器

SN74ALVC126D

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

TI2

德州仪器

SN74ALVC126D.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

TI2

德州仪器

SN74ALVC产品属性

  • 类型

    描述

  • 型号

    SN74ALVC

  • 功能描述

    逻辑门 Quadruple 2-Input Positive-NAND Gate

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 产品

    OR

  • 逻辑系列

    LVC

  • 栅极数量

    2

  • 线路数量（输入/输出）

    2/1

  • 高电平输出电流

    - 16 mA

  • 低电平输出电流

    16 mA

  • 传播延迟时间

    3.8 ns

  • 电源电压-最大

    5.5 V

  • 电源电压-最小

    1.65 V

  • 最大工作温度

    + 125 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DCU-8

  • 封装

    Reel

SN74ALVC供应商更多...

更新时间：2025-8-13 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市冠亿通科技有限公司
SN74ALVCH16373DGGR
TI/德州仪器
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市赛美科科技有限公司
SN74ALVC00PWR
TI
TSSOP14
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市宇集芯电子有限公司
SN74ALVC32PW
TI
24+
TSSOP-14
90000
一级代理商进口原装现货、假一罚十价格合理
询价
深圳市福田区绿盛电子商行
SN74ALVC125D
TI
2018+
26976
代理原装现货/特价热卖!
询价
深圳市星辰微电科技有限公司
SN74ALVC08DR
TI
22+
SOP-14
1073
仓库现货,终端可送样品
询价
深圳市华来深电子有限公司
SN74ALVCH16373DGGR
TI
23+
TSSOP48
8560
受权代理!全新原装现货特价热卖!
询价
深圳市宝芯创电子有限公司
SN74ALVCH16244DGG
恩XP
09+
TSSOP48
25791
进口原带现货
询价
上海专毅电子科技有限公司
SN74ALVCH16245DGGR
TI
17+
SOP
9700
只做全新进口原装,现货库存
询价
深圳市煦洪科技有限公司
SN74ALVCH16271DGGR
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源！
询价
深圳市中远芯科技有限公司
SN74ALVCH162830
TI/德州仪器
98+
TSSOP
500
原装现货
询价

SN74ALVC芯片相关品牌

SN74ALVC规格书下载地址

SN74ALVC参数引脚图相关

SN74ALVC数据表相关新闻

  • SN74ALVC164245DGGR

    进口代理

    2022-8-23

  • SN74ALS1639J4

    SN74ALS1639J4

    2022-6-17

  • SN74ALVC162334DLR

    品　　牌： TI(德州仪器) 厂家型号： SN74ALVC162334DLR 商品编号： C2653042 封装： SSOP-48 数据手册： 下载文件 商品毛重： 0.001克(g) 包装方式： 编带

    2021-8-3

  • SN74ALVCH16270DL

    安装类型 表面贴装型 封装/外壳 56-BSSOP（0.295，7.50mm 宽） 工作温度 -40°C ~ 85°C 供应商器件封装 56-SSOP 逻辑类型 寄存总线交换器 电流-输出高、低 24mA，24mA 电压-供电 1.65V ~ 3.6V 电路数 12 至 24 位

    2021-7-13

  • SN74ALS273NSR

    SN74ALS273NSR,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.

    2021-3-18

  • SN74ALS996NT，集成电路（IC）逻辑-锁销，现货销售

    全新原装，公司现货销售

    2019-8-20

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示