SN74AC02-Q1 Automotive Quadruple 2-Input NOR Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Wide operating range of 1.5V to 6V • Inputs accept voltage

SN74AC02-Q1 Automotive Quadruple 2-Input NOR Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Wide operating range of 1.5V to 6V • Inputs accept voltage

SN74AC02-Q1 Automotive Quadruple 2-Input NOR Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Wide operating range of 1.5V to 6V • Inputs accept voltage

SN74AC02-Q1 Automotive Quadruple 2-Input NOR Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Wide operating range of 1.5V to 6V • Inputs accept voltage

Automotive, 4-channel, 2-input, 1.5V to 5.5V NOR gates

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74AC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs

Quad 2-Input NOR Gate

General Description The AC02/ACT02 contains four, 2-input NOR gates. Features ■ ICC reduced by 50 on 74AC02 only ■ Outputs source/sink 24 mA ■ ACT02 has TTL-compatible inputs

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74AC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs

QUAD 2-INPUT NOR GATE

文件：184.39 Kbytes Page：8 Pages

QUAD 2-INPUT NOR GATE

文件：184.39 Kbytes Page：8 Pages