位置：首页 > IC中文资料第5735页 > SMZJ3788
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SMZJ3788 | SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHE3orP/NHM3 •M | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountPowerVoltage-RegulatingDiodes FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountZenerDiodes 文件：595.2 Kbytes Page：2 Pages | JUXINGGuangdong Juxing Electronics Technology Co., Ltd. 广东钜兴电子广东钜兴电子科技有限公司 |  | | |
SurfaceMountZenerDiodes 文件：28.12 Kbytes Page：2 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
3WattsSurfaceMountZenerDiodes 文件：332.53 Kbytes Page：2 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | | |
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：DIODE ZENER 9.1V 1.5W DO214AA 分立半导体产品 二极管 - 齐纳 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：DIODE ZENER 9.1V 1.5W DO214AA 分立半导体产品 二极管 - 齐纳 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
SurfaceMountZenerDiodes 文件：595.2 Kbytes Page：2 Pages | JUXINGGuangdong Juxing Electronics Technology Co., Ltd. 广东钜兴电子广东钜兴电子科技有限公司 | | | |
3WattsSurfaceMountZenerDiodes 文件：332.53 Kbytes Page：2 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
SurfaceMountZenerDiodes 文件：28.12 Kbytes Page：2 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1250WATTS(AC)DC/DCSINGLEOUTPUT 1250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •6Ux28TEx226mm •Weight:6.5kg | POWERBOX Powerbox manufactures |  | | |
1250WATTS(AC)DC/DCSINGLEOUTPUT 1250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •6Ux28TEx226mm •Weight:6.5kg | POWERBOX Powerbox manufactures | | | |
1250WATTS(AC)DC/DCSINGLEOUTPUT 1250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •6Ux28TEx226mm •Weight:6.5kg | POWERBOX Powerbox manufactures | | | |
BNCFemaletoMinigrabberTestClipBreakout 文件：30.84 Kbytes Page：1 Pages | POMONA Pomona Electronics |  | | |
2-Phase,DualOutputSynchronousBoostController 文件：427.87 Kbytes Page：32 Pages | LINERLinear Technology 线性技术公司 |  | |
SMZJ3788产品属性
- 类型
描述
- 型号
SMZJ3788
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Surface Mount Power Voltage-Regulating Diodes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
20+ |
SMBDO-214AA |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
23+ |
SMB |
6000 |
只有原装正品,老板发话合适就出 |
|||
VISHAY |
2023+ |
DO-214AA(SMBJ) |
18800 |
芯为科技只做原装 |
|||
VISHAY/威世 |
DO-214AA |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
VISHAY/威世通 |
1833+ |
SMB |
1500 |
原装现货!天天特价!随时可以货! |
|||
VISHAY |
2016+ |
DO-214 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY |
19+ |
DO-214AA(SMBJ) |
200000 |
||||
VISHAY/威世 |
21+ |
DO-214AA |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
VISHAY |
24+ |
DO-214AA(SMBJ) |
130000 |
原装现货假一赔十 |
|||
VIS |
1500 |
SMZJ3788芯片相关品牌
SMZJ3788规格书下载地址
SMZJ3788参数引脚图相关
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SMZJ3788数据表相关新闻
SMT-0540-S-R
SMT-0540-S-R
2022-10-10SMT-1427-S-3-R
SMT-1427-S-3-R
2021-8-3SN11220APFG USB1.1双声道音效控制器，用于耳机、喇叭、网络电话及PC
SN11220APFGUSB1.1双声道音效控制器，用于耳机、喇叭、网络电话及PC
2020-7-15SMT，触摸芯片，QFN24，CY8C4025LQI-S411，CYPRESS，微信每天物料低于市场价销售，兴中扬电子，假一罚万
SMT，触摸芯片，QFN24，CY8C4025LQI-S411，CYPRESS，微信每天物料低于市场价销售，兴中扬电子，假一罚万
2020-3-1SN10502DGN，SN10503DR，SN10503PWP，SN105046DBVR，SN10504PW，SN10504PWR，SN105064PGC，SN105065PGE
SN10502DGN，SN10503DR，SN10503PWP，SN105046DBVR，SN10504PW，SN10504PWR，SN105064PGC，SN105065PGE
2019-12-11SN200429N，SN200430N，SN200431N，SN200433DR，SN200435DR，SN200436DWR，SN200438N，SN200439N，SN200441N
SN200429N，SN200430N，SN200431N，SN200433DR，SN200435DR，SN200436DWR，SN200438N，SN200439N，SN200441N
2019-12-11
DdatasheetPDF页码索引
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