16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module

General Description The ACT–S512K32V is a High Speed 4 megabit CMOS SRAM Multichip Module (MCM) designed for full temperature range, 3.3V Power Supply, military, space, or high reliability mass memory and fast cache applications. Features ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall

ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module

FEATURES ■ 4 – 512K x 8 SRAMs & 4 – 512K x 8 Flash Die in One MCM ■ Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash) ■ Organized as 512K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data Bus ■ Low Power CMOS ■ Input and Output TTL Compatible Design ■ MIL-PRF-38534

ACT-F512K32 High Speed 16 Megabit FLASH Multichip Module

文件：238.69 Kbytes Page：20 Pages