16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

Rad Hardened 16Mb Asynchronous SRAM

High density 16Mbit Asychronous SRAM manufactured with HARDSIL® technology

丝印代码：SMV512K32HFG；16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

丝印代码：SMV512K32HFG；16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

丝印代码：SMV512K32HFG；16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

16-Mb RADIATION-HARDENED SRAM

1FEATURES • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output

16MB 防辐射 SRAM

SMV512K32 是一款高性能异步 CMOS SRAM，由 32 位 524,288 个字组成。 可在两种模式：主控或受控间进行引脚选择。 主器件为用户提供了定义的自主 EDAC 擦除选项。 从器件选择采用按要求擦除特性，此特性可由一个主器件启动。 根据用户需要，可提供 3 个读周期和 4 个写周期（描述如下）。 • 20ns 读取，13.8ns 写入（最大存取时间）\n• 内置 EDAC（错误侦测和校正）以减轻软错误\n• CMOS 兼容输入和输出电平，3 态双向数据总线 \n• 辐射性能 放射耐受性是一个基于最初器件标准的典型值。 辐射数据和批量验收测试可用 - 细节请与厂家联系。 \n• TID 抗扰度 > 3e5 rad (Si)\n• 闭锁抗扰度 > LET = 110 MeV (T = 398K)\n• 采用 76 引线陶瓷方形扁平封装\n• 可提供工程评估 (/EM) 样品 这些部件只用于工程评估。 它们的加工工艺为非兼容流程（例如，无预烧过程等），并且只在 25°C 的温度额定值下;

包装：盒 描述：BOARD BREAKOUT SMV512K32 开发板，套件，编程器 配件

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

16-Mb RADIATION-HARDENED SRAM

文件：361.98 Kbytes Page：25 Pages

16-Mb RADIATION-HARDENED SRAM

文件：421.51 Kbytes Page：26 Pages

ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module

General Description The ACT–S512K32V is a High Speed 4 megabit CMOS SRAM Multichip Module (MCM) designed for full temperature range, 3.3V Power Supply, military, space, or high reliability mass memory and fast cache applications. Features ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall

ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module

FEATURES ■ 4 – 512K x 8 SRAMs & 4 – 512K x 8 Flash Die in One MCM ■ Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash) ■ Organized as 512K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data Bus ■ Low Power CMOS ■ Input and Output TTL Compatible Design ■ MIL-PRF-38534

512K X 32 SRAM MODULE SMD 5962-94611

[White Electronic] 512Kx32 SRAM MODULE, SMD 5962-94611

ACT-F512K32 High Speed 16 Megabit FLASH Multichip Module

文件：238.69 Kbytes Page：20 Pages

512Kx32 5V FLASH MODULE, SMD 5962-94612

文件：159.55 Kbytes Page：15 Pages