Silicon Hyperabrupt Varactor Diode Chips

Description Alpha Industries’ product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RSwide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 milsnominal) and are f

Hyperabrupt Junction Tuning Varactors

Description The SMV2019, SMV2022, and SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems. Features ● Low series res

Silicon Hyperabrupt Varactor Diode Chips

Description\nAlpha Industries’ product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RSwide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 milsnominal) and are ful High Q for Low Loss Resonators\nLow Leakage Current\nHigh Tuning Ratio for Wideband VCOs\nSPICE Model Parameters\nSmall Footprint Chip Design;

Hyperabrupt Junction Tuning Varactors

The SMV2019 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems.\n\nSMV2019 Series includes SMV2019-079LF and SMV2019-040LF. • Low series resistance\n• High capacitance ratio at low reverse voltage\n• Packages rated MSL1, 260 °C per JEDEC J-STD-020;

Hyperabrupt Junction Tuning Varactors

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Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

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Silicon Hyperabrupt Varactor Diode Chips

Description Alpha Industries’ product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RSwide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 milsnominal) and are f

Hyperabrupt Junction Tuning Varactor Diode Chip

Skyworks silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils nominal) and are fully passivated resulting in low leaka • High Q for Low Loss Resonators \n• Low Leakage Current \n• High Tuning Ratio for Wideband VCOs \n• SPICE Model Parameters \n• Small Footprint Chip Design;

Hyperabrupt Junction Tuning Varactors

Description The SMV2019, SMV2022, and SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in wireless systems. Features ● Low series res

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Hyperabrupt Junction Tuning Varactors

文件：822.57 Kbytes Page：10 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Hyperabrupt Junction Tuning Varactors

文件：822.57 Kbytes Page：10 Pages

封装/外壳：SOD-882 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE VARACTOR 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

SMV2019-SMV2023 Series: Hyperabrupt Junction Tuning Varactors

文件：646.77 Kbytes Page：11 Pages

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE VARACTOR 22V 20MA SC79 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

SMV2019-SMV2023 Series: Hyperabrupt Junction Tuning Varactors

文件：646.77 Kbytes Page：11 Pages

Hyperabrupt Junction Tuning Varactors

文件：822.57 Kbytes Page：10 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips

文件：497.4 Kbytes Page：5 Pages

NTSC/PAL Chroma Decoder

Description The CXA2019AQ is a bipolar IC which integrates the luminance signal processing, chroma signal processing, and sync signal processing functions for NTSC/PAL system color TVs onto a single chip. Features • Sub picture bright and white balance can be adjusted by using the main picture

Load Switching Applications

Features • Low ON resistance. • 2.5V drive. • Mounting height 1.1mm. • Composite type, facilitating high-density mounting.

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or

CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT

DESCRIPTION The TEA2019 is an 14-pin DIP low cost integrated circuit designed for the control of switch mode power supplies. It has the same basic functions as the TEA2018Abut with synchronization capability by internal PLL. It is particularly suitable for applications where oscillator synchron

METAL GATE RF SILICON FET

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