METAL GATE RF SILICON FET

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Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

METAL GATE RF SILICON FET

文件：16.219 Kbytes Page：2 Pages

NTSC/PAL Chroma Decoder

Description The CXA2019AQ is a bipolar IC which integrates the luminance signal processing, chroma signal processing, and sync signal processing functions for NTSC/PAL system color TVs onto a single chip. Features • Sub picture bright and white balance can be adjusted by using the main picture

Load Switching Applications

Features • Low ON resistance. • 2.5V drive. • Mounting height 1.1mm. • Composite type, facilitating high-density mounting.

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or

CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT

DESCRIPTION The TEA2019 is an 14-pin DIP low cost integrated circuit designed for the control of switch mode power supplies. It has the same basic functions as the TEA2018Abut with synchronization capability by internal PLL. It is particularly suitable for applications where oscillator synchron