Surface Mount Schottky-Rectifiers

Features Low forward voltage drop High power dissipation Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Output Rectification in DC/DC Converters, Polarity Protection, Free-wheeling diodes Commercial grade 1 Mechanical Data 1) Taped and ree

Schottky barrier rectifiers diodes

Forward Current: 1 A Reverse Voltage: 20 to 100 V Features • Max. solder temperature: 260 °C • Plastic material has UL classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

SURFACE MOUNT SCHOTTKY

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Plastic package has Underwriters Laborator Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capab

Schottky Diodes

SMD Schottky Barrier Rectifier Diodes

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Surface Mount Schottky Rectifiers

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Schottky barrier rectifiers diodes

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Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP