Dual N-Channel Enhancement Mode MOSFET

文件：269.88 Kbytes Page：11 Pages

Dual N-Channel MOSFET uses advanced trench technology

文件：2.40562 Mbytes Page：4 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：1.63827 Mbytes Page：7 Pages

N-Channel MOSFET

Dual N-Channel 20-V (D-S) MOSFET

文件：986.32 Kbytes Page：7 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：269.88 Kbytes Page：11 Pages

MOS(场效应管)

小信号场效应管

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes Page：7 Pages

6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages