P-Channel Enhancement Mode MOSFET

文件：168.93 Kbytes Page：12 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.70116 Mbytes Page：8 Pages

P-Channel MOSFET uses advanced trench technology

文件：1.47456 Mbytes Page：5 Pages

P-Channel Enhancement Mode MOSFET

文件：168.93 Kbytes Page：12 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68771 Mbytes Page：8 Pages

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

MACHINE SCREW PAN PHILLIPS 10-32

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20V P-Channel Increased MOS FET

文件：299.94 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes Page：8 Pages