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SM6T100A价格
参考价格：￥0.4025
型号：SM6T100A 品牌：STMicroelectronics 备注：这里有SM6T100A多少钱，2025年最近7天走势，今日出价，今日竞价，SM6T100A批发/采购报价，SM6T100A行情走势销售排行榜，SM6T100A报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SM6T100A | TRANSZORB??SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR BreakdownVoltage-6.8to220VoltsPeakPulsePower-600Watts FEATURES ♦Forsurfacemountedapplicationsinordertooptimizeboardspace ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦Excellentclampingcapability ♦RepetitionRate(duty | GE GE Industrial Company |  |   |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Lowinducta | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
SM6T100A | TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
SM6T100A | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •Excellentclampingcapability •Repetitionrate(dutycycle):0.01 •Fastresponsetime:typicallylessthan1.0psfrom | MDE MDE Semiconductor, Inc. |  | |
SM6T100A | TRANSILTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | Transil Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
SM6T100A | 600WattsSurfaceMountTVS DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:600W | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | |
SM6T100A | 600W100VTVStransientsuppressordiode 文件：633.287 Kbytes Page：4 Pages | | | |
SM6T100A | SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE 文件：633.509 Kbytes Page：4 Pages | | | |
SM6T100A | SurfaceMountTRANSZORB®TransientVoltageSuppressors 文件：111.21 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | SurfaceMountTRANSZORBTransientVoltageSuppressors 文件：108.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SM6T100A | 封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT） 描述：TVS DIODE 85.5VWM 178VC SMB 电路保护 TVS - 二极管 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：TVS DIODE 85.5VWM 137VC DO214AA 电路保护 TVS - 二极管 | ETC 知名厂家 | ETC | | |
Approvedfor200,000AmpWithstandRating 文件：353.35 Kbytes Page：3 Pages | MARATHON Regal Beloit Corporation |  | | |
FlammabilityratingofinsulatorbaseUL94V-0 文件：743.21 Kbytes Page：3 Pages | MARATHON Regal Beloit Corporation | | |
SM6T100A产品属性
- 类型
描述
- 型号
SM6T100A
- 功能描述
TVS 二极管 - 瞬态电压抑制器 600W 100V Unidirect
- RoHS
否
- 制造商
Vishay Semiconductors
- 极性
Bidirectional
- 击穿电压
58.9 V
- 钳位电压
77.4 V
- 峰值浪涌电流
38.8 A
- 封装/箱体
DO-214AB
- 最小工作温度
- 55 C
- 最大工作温度
+ 150 C
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
SMB |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
STMicroelectronics |
25+ |
N/A |
7500 |
原装现货17377264928微信同号 |
|||
ST |
22+ |
DO-214AA |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
23+ |
SMB |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法半导体 |
21+ |
SMB(DO-214AA) |
10000 |
只做原装,质量保证 |
|||
ST/意法半导体 |
24+ |
SMB(DO-214AA) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
FAGOR |
05+ |
原厂原装 |
42744 |
只做全新原装真实现货供应 |
|||
ST |
24+ |
SMB |
12500 |
原厂授权代理 价格绝对优势 |
|||
ST |
24+ |
SMB |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
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SM6T100A规格书下载地址
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SM712.TCTSemtechTVSDIODE12VWM/7VWMSOT23，SM712.TCT产品详细规格
2018-12-24
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