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SM6T100价格
参考价格:¥0.4025
型号:SM6T100A 品牌:STMicroelectronics 备注:这里有SM6T100多少钱,2025年最近7天走势,今日出价,今日竞价,SM6T100批发/采购报价,SM6T100行情走势销售排行榜,SM6T100报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SM6T100 | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
600WattsSurfaceMountTVS DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:600W | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TRANSZORB??SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR BreakdownVoltage-6.8to220VoltsPeakPulsePower-600Watts FEATURES ♦Forsurfacemountedapplicationsinordertooptimizeboardspace ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦Excellentclampingcapability ♦RepetitionRate(duty | GE GE Industrial Company | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Lowinducta | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •Excellentclampingcapability •Repetitionrate(dutycycle):0.01 •Fastresponsetime:typicallylessthan1.0psfrom | MDE MDE Semiconductor, Inc. | |||
TRANSILTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Transil Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
TRANSILTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •Excellentclampingcapability •Repetitionrate(dutycycle):0.01 •Fastresponsetime:typicallylessthan1.0psfrom | MDE MDE Semiconductor, Inc. | |||
TransilTM Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
Transil Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
600WattsSurfaceMountTVS DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:600W | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 |
SM6T100产品属性
- 类型
描述
- 型号
SM6T100
- 功能描述
TVS 二极管 - 瞬态电压抑制器 600W 100V Unidirect
- RoHS
否
- 制造商
Vishay Semiconductors
- 极性
Bidirectional
- 击穿电压
58.9 V
- 钳位电压
77.4 V
- 峰值浪涌电流
38.8 A
- 封装/箱体
DO-214AB
- 最小工作温度
- 55 C
- 最大工作温度
+ 150 C
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
SMB(DO-214AA) |
12700 |
买原装认准中赛美 |
|||
STM |
24+ |
DO214AA |
9800 |
一级代理/全新原装现货/长期供应! |
|||
ST |
2016+ |
DO-214A |
2298 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
STMicroectronics |
2022+PB |
SMB |
88000 |
||||
Vishay(威世) |
22+ |
N/A |
11800 |
可配单提供样品 |
|||
ST |
2025+ |
DO-214AA |
16000 |
原装优势绝对有货 |
|||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
|||
ST |
16+ |
DO-214AA |
15000 |
进口原装现货/价格优势! |
|||
STMICROELECTRONICSSEMI |
24+ |
SMB |
10000 |
全新原装现货库存 |
|||
ST/意法半导体 |
2023+ |
SMB(DO-214AA) |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
SM6T100规格书下载地址
SM6T100参数引脚图相关
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
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- SM6T62A
- SM6T56A
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- SM6T47A
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- SM6T33A
- SM6T30A
- SM6T27A
- SM6T24A
- SM6T22A
- SM6T20A
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- SM6T16A
- SM6T15A
- SM6T150CA
- SM6T150A-E3/52
- SM6T150A
- SM6T13A
- SM6T12CAY
- SM6T12CA-E3/5B
- SM6T12CA-E3/52
- SM6T12CA
- SM6T12AY
- SM6T12A-E3/52
- SM6T12A
- SM6T11A
- SM6T10CAY
- SM6T10CA
- SM6T10AY
- SM6T10A-E3/52
- SM6T10A
- SM6T100CA-E3/52
- SM6T100CA
- SM6T100A-E3/52
- SM6T100A
- SM6T_08
- SM6S36A
- SM6S36
- SM6S33AHE3/2D
- SM6S33A
- SM6S33
- SM6S30A
- SM6S30
- SM6S28A
- SM6S28
- SM6S26A-E3/2D
- SM6S26A
- SM6S26
- SM6S24A
- SM6S24
- SM6S22-E3/2D
- SM6S22A
- SM6S22
- SM6S20AHE3/2D
- SM6S20A-E3/2D
- SM6S20A
- SM6S20
- SM6S18A
- SM6S18
- SM6S17A
- SM6K2T110
- SM6HT43A
- SM6HT30A
- SM6HT27A
- SM6HT24A
- SM6A27THE3/I
- SM6A27HE3/2D
- SM6A27-6600
- SM68P-ACTEL
- SM6841-030-A-H-S
- SM6702-27HB1-EL
- SM670227HB
- SM6611EAH-ER
- SM6610BH-G-EL
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DdatasheetPDF页码索引
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