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SM6T100价格
参考价格:¥0.4025
型号:SM6T100A 品牌:STMicroelectronics 备注:这里有SM6T100多少钱,2025年最近7天走势,今日出价,今日竞价,SM6T100批发/采购报价,SM6T100行情走势销售排行榜,SM6T100报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SM6T100 | SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0 | SUNMATE 森美特 | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0 | SUNMATE 森美特 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TRANSZORB??SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts FEATURES ♦ For surface mounted applications in order to optimize board space ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Excellent clamping capability ♦ Repetition Rate (duty | GE GE Industrial Company | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Low inducta | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransilTM Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Excellent clamping capability • Repetition rate (duty cycle):0.01 • Fast response time: typically less than 1.0 ps from | MDE | |||
TRANSILTM Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Transil Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
600Watts Surface Mount TVS DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 600 W | LUGUANG 鲁光电子 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransilTM Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransilTM Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0 | SUNMATE 森美特 | |||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0 | SUNMATE 森美特 | |||
600Watts Surface Mount TVS DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 600 W | LUGUANG 鲁光电子 | |||
TRANSILTM Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Excellent clamping capability • Repetition rate (duty cycle):0.01 • Fast response time: typically less than 1.0 ps from | MDE | |||
TransilTM Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
Transil Description The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 600 | STMICROELECTRONICS 意法半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform • Available in uni-directional and bi-directional • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0 | VishayVishay Siliconix 威世科技威世科技半导体 |
SM6T100产品属性
- 类型
描述
- 型号
SM6T100
- 功能描述
TVS 二极管 - 瞬态电压抑制器 600W 100V Unidirect
- RoHS
否
- 制造商
Vishay Semiconductors
- 极性
Bidirectional
- 击穿电压
58.9 V
- 钳位电压
77.4 V
- 峰值浪涌电流
38.8 A
- 封装/箱体
DO-214AB
- 最小工作温度
- 55 C
- 最大工作温度
+ 150 C
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMICROELECTRONICSSEMI |
SMB |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
ST |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
|||
ST |
08+ |
DO-214AA |
40000 |
绝对全新原装强调只做全新原装现 |
|||
STMICROELECTRONICSSEMI |
2023+ |
SMB |
4148 |
原厂全新正品旗舰店优势现货 |
|||
ST |
23+ |
SMB |
30000 |
代理全新原装现货,价格优势 |
|||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
|||
ST |
16+ |
DO-214AA |
15000 |
进口原装现货/价格优势! |
|||
ST |
24+ |
SMD |
5000 |
只做原装公司现货 |
|||
ST |
24+ |
DO214 |
99600 |
郑重承诺只做原装进口现货 |
|||
ST |
2020 |
DO214AC |
3300 |
绝对全新原装现货,欢迎来电查询 |
SM6T100规格书下载地址
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- SM6S18
- SM6S17A
- SM6K2T110
- SM6HT43A
- SM6HT30A
- SM6HT27A
- SM6HT24A
- SM6A27THE3/I
- SM6A27HE3/2D
- SM6A27-6600
- SM68P-ACTEL
- SM6841-030-A-H-S
- SM6702-27HB1-EL
- SM670227HB
- SM6611EAH-ER
- SM6610BH-G-EL
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