SM6T100价格

参考价格:¥0.4025

型号:SM6T100A 品牌:STMicroelectronics 备注:这里有SM6T100多少钱,2025年最近7天走势,今日出价,今日竞价,SM6T100批发/采购报价,SM6T100行情走势销售排行榜,SM6T100报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SM6T100

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

600WattsSurfaceMountTVS

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:600W

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

TRANSZORB??SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

BreakdownVoltage-6.8to220VoltsPeakPulsePower-600Watts FEATURES ♦Forsurfacemountedapplicationsinordertooptimizeboardspace ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦Excellentclampingcapability ♦RepetitionRate(duty

GE

GE Industrial Company

GE

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Lowinducta

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

TransilTM

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •Excellentclampingcapability •Repetitionrate(dutycycle):0.01 •Fastresponsetime:typicallylessthan1.0psfrom

MDE

MDE Semiconductor, Inc.

MDE

TRANSILTM

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Transil

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

TransilTM

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

TransilTM

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

TRANSILTM

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •Excellentclampingcapability •Repetitionrate(dutycycle):0.01 •Fastresponsetime:typicallylessthan1.0psfrom

MDE

MDE Semiconductor, Inc.

MDE

TransilTM

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

Transil

Description TheSM6TTransilserieshasbeendesignedtoprotectsensitiveequipmentagainstelectrostaticdischargesaccordingtoIEC61000-4-2andMILSTD883,method3015,andelectricaloverstressaccordingtoIEC61000-4-4and5.Thesedevicesaremoregenerallyusedagainstsurgesbelow600

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

600WattsSurfaceMountTVS

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:600W

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •600Wpeakpulsepowercapabilitywitha10/1000µswaveform •Availableinuni-directionalandbi-directional •Excellentclampingcapability •Lowinductance •MeetsMSLlevel1,perJ-STD-0

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SM6T100产品属性

  • 类型

    描述

  • 型号

    SM6T100

  • 功能描述

    TVS 二极管 - 瞬态电压抑制器 600W 100V Unidirect

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 极性

    Bidirectional

  • 击穿电压

    58.9 V

  • 钳位电压

    77.4 V

  • 峰值浪涌电流

    38.8 A

  • 封装/箱体

    DO-214AB

  • 最小工作温度

    - 55 C

  • 最大工作温度

    + 150 C

更新时间:2025-6-14 8:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
23+
SMB(DO-214AA)
12700
买原装认准中赛美
STM
24+
DO214AA
9800
一级代理/全新原装现货/长期供应!
ST
2016+
DO-214A
2298
只做原装,假一罚十,公司可开17%增值税发票!
STMicroectronics
2022+PB
SMB
88000
Vishay(威世)
22+
N/A
11800
可配单提供样品
ST
2025+
DO-214AA
16000
原装优势绝对有货
Vishay(威世)
24+
N/A
11800
可配单提供样品
ST
16+
DO-214AA
15000
进口原装现货/价格优势!
STMICROELECTRONICSSEMI
24+
SMB
10000
全新原装现货库存
ST/意法半导体
2023+
SMB(DO-214AA)
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供

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