N-Channel MOSFET uses advanced trench technology

文件：1.43705 Mbytes Page：4 Pages

Dual N-Channel Enhancement Mode MOSFET

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4912 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synch

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4912 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synch

DMOS System Power Supply ICs with low current consumption

Description The BD4912/BD4912-V4 provides multiple supply voltage outputs for use in car audio and satellite navigation systems with CD player, radio, antenna, lighting, and other components. In addition to overcurrent, overvoltage, and thermal shutdown circuits, it incorporates circuitry for r

250 (6.4) PC QUICK-FIT MALE TABS

文件：503.41 Kbytes Page：1 Pages