Dual Enhancement Mode MOSFET (N-and P-Channel)

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Dual Enhancement Mode MOSFET (N- and P-Channel)

N-Channel MOSFET

Dual Enhancement Mode MOSFET (N-and P-Channel)

文件：220.11 Kbytes Page：16 Pages

超声波收发器

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen F

PECL Output

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Single-Band Connectorized Monopole Antenna

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